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? semiconductor components industries, llc, 2007 april, 2007 ? rev. 5 1 publication order number: emc2dxv5t1/d emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 preferred devices dual common base?collector bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor t ransistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the emc2dxv5t1 series, two complementary brt devices are housed in the sot?553 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? these are pb?free devices maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. marking diagram preferred devices are recommended choices for future use and best overall value. 45 q1 q2 r1 r1 r2 r2 31 2 http://onsemi.com sot?553 case 463b 1 5 ux m ux = specific device code x = c, 3, e, or 5 m = date code = pb?free package see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information (note: microdot may be in either location)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 2 thermal characteristics characteristic symbol max unit one junction heated total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 350 (note 1) c/w both junctions heated total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad device ordering information, marking and resistor values transistor 1 ? pnp transistor 2 ? npn device marking r1 (k) r2 (k) r1 (k) r2 (k) package shipping ? emc2dxv5t1 uc 22 22 22 22 sot?553* 4000 / tape & reel emc2dxv5t1g sot?553* emc2dxv5t5 sot?553* 8000 / tape & reel emc2dxv5t5g sot?553* emc3dxv5t1 u3 10 10 10 10 sot?553* 4000 / tape & reel emc3dxv5t1g sot?553* emc3dxv5t5 sot?553* 8000 / tape & reel emc3dxv5t5g sot?553* emc4dxv5t1 ue 10 47 47 47 sot?553* 4000 / tape & reel emc4dxv5t1g sot?553* emc4dxv5t5 sot?553* 8000 / tape & reel EMC4DXV5T5G sot?553* emc5dxv5t1 u5 4.7 10 47 47 sot?553* 4000 / tape & reel emc5dxv5t1g sot?553* emc5dxv5t5 sot?553* 8000 / tape & reel emc5dxv5t5g sot?553* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *this package is inherently pb?free. figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 833 c/w
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit q1 transistor: pnp off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current emc2dxv5t1 (v eb = 6.0, i c = 5.0 ma) emc3dxv5t1 emc4dxv5t1 emc5dxv5t1 i ebo ? ? ? ? ? ? ? ? 0.2 0.5 0.2 1.0 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain emc2dxv5t1 (v ce = 10 v, i c = 5.0 ma) emc3dxv5t1 emc4dxv5t1 emc5dxv5t1 h fe 60 35 80 20 100 60 140 35 ? ? ? ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor emc2dxv5t1 emc3dxv5t1, emc4dxv5t1 emc5dxv5t1 r1 15.4 7.0 3.3 22 10 4.7 28.6 13 6.1 k resistor ratio emc2dxv5t1 emc3dxv5t1 emc4dxv5t1 emc5dxv5t1 r1/r2 0.8 0.8 0.17 0.38 1.0 1.0 0.21 0.47 1.2 1.2 0.25 0.56 q2 transistor: npn off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current emc2dxv5t1 (v eb = 6.0, i c = 5.0 ma) emc3dxv5t1 emc4dxv5t1, emc5dxv5t1 i ebo ? ? ? ? ? ? 0.2 0.5 0.1 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain emc2dxv5t1 (v ce = 10 v, i c = 5.0 ma) emc3dxv5t1 emc4dxv5t1, emc5dxv5t1 h fe 60 35 80 100 60 140 ? ? ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor emc2dxv5t1 emc3dxv5t1 emc4dxv5t1, emc5dxv5t1 r1 15.4 7.0 33 22 10 47 28.6 13 61 k resistor ratio emc2dxv5t1 emc3dxv5t1 emc4dxv5t1, emc5dxv5t1 r1/r2 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 4 typical electrical characteristics ? emc2dxv5t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 2. v ce(sat) versus i c figure 3. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 4. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =?25 c 75 c 100 10 1 0.1 40 50 figure 5. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (v) 5 6 7 8 9 10 figure 6. input voltage versus output current 0.01 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =?25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (v) c ob , capacitance (pf) 25 c i c /i b = 10 25 c ?25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 ma t a = 25 c 75 c 25 c t a =?25 c v o = 5 v v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 5 typical electrical characteristics ? emc2dxv5t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 7. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =?25 c 75 c 25 c 40 50 figure 8. dc current gain figure 9. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c ?25 c t a =?25 c 25 c figure 10. output current versus input voltage 75 c 25 c t a =?25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (v) 56 78 910 figure 11. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 6 typical electrical characteristics ? emc3dxv5t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 12. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (v) t a =?25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage figure 16. input voltage versus output current 0.01 20 i c , collector current (ma) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c ?25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =?25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (v) c ob , capacitance (pf) 0 t a =?25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 7 typical electrical characteristics ? emc3dxv5t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 17. v ce(sat) versus i c figure 18. dc current gain figure 19. output capacitance figure 20. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (v) 10 1 0.1 0.01 0.001 246810 t a =?25 c 0 i c , collector current (ma) 100 t a =?25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 21. input voltage versus output current 0.001 t a =?25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (v) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 8 typical electrical characteristics ?emc4dxv5t1 pnp transistor 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (v) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 23. dc current gain 1 10 100 i c , collector current (ma) figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (v) c ob , capacitance (pf) figure 26. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c load +12 v figure 27. inexpensive, unregulated current sourc e typical application for pnp brts 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 5 v v o = 0.2 v 25 c t a =?25 c 75 c 75 c v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 9 typical electrical characteristics ? emc5dxv5t1 pnp transistor 25 c i c , collector current (ma) h fe , dc current gain figure 28. v ce(sat) versus i c figure 29. dc current gain figure 30. output capacitance figure 31. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 1 1 1000 75 c 25 c 100 0 v in , input voltage (v) 10 1 0.1 0.01 2468 12 t a =?25 c t a =75 c ?25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 010 203040 12 6 4 2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v 30 10 60 100 10 10 8 15 25 35 45 5 series 1 10 v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 10 typical electrical characteristics ? emc4dxv5t1, emc5dxv5t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 32. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (v) t a =?25 c 75 c 25 c figure 33. dc current gain figure 34. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 35. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) figure 36. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c v ce(sat) , collector emitter saturation voltage (v)
emc2dxv5t1, emc3dxv5t1, emc4dxv5t1, emc5dxv5t1 http://onsemi.com 11 package dimensions sot?553 xv5 suffix case 463b?01 issue b e m 0.08 (0.003) x b 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.50 0.55 0.60 0.020 inches b 0.17 0.22 0.27 0.007 c d 1.50 1.60 1.70 0.059 e 1.10 1.20 1.30 0.043 e 0.50 bsc l 0.10 0.20 0.30 0.004 0.022 0.024 0.009 0.011 0.063 0.067 0.047 0.051 0.008 0.012 nom max 1.50 1.60 1.70 0.059 0.063 0.067 h e 0.08 0.13 0.18 0.003 0.005 0.007 0.020 bsc on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. emc2dxv5t1/d publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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